Re: Re. EUV
The biggest draw of using EUV over multi-patterning (we're up to quad-patterning with the 9 nm node already) is that EUV can achieve these nodes at single pass exposures. Line edge roughness is actually comparable (Due to electrons being knocked loose by the EUV from what I understand, which is a problem getting solved by new resist types), but single pass allows for smaller feature to feature distances, meaning more efficient chips even at the same CD.
I'm not all that in depth knowledge about the exact process specs. I'm just involved in building parts for them and then keeping those parts operational.
