Dynamically adjusting the voltages of the individual cells is hardly new, or even exciting, tech. SMART Storage and STEC began doing that in 2011. Now there are a few more hooks exposed, such as in Micron Fortis Flash, but others are also exploiting this technique as well. Again, nothing new.
Explain the "new" part again? I'm having a hard time understanding what is being done that is not already done elsewhere. From the descriptions in the article, and on the NVMdurance site, none of this is new.