
Rapid cooling that leads to amorphous (glassy) structure
In phase-change memory, it's rapid cooling of the chalcogenide that "traps" it in an amorphous (high-resistivity) structure -- slow cooling gives it time to form crystalline domains.
In phase-change memory, it's rapid cooling of the chalcogenide that "traps" it in an amorphous (high-resistivity) structure -- slow cooling gives it time to form crystalline domains.
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