Intel shows off backside power and stacked transistors at IEDM

Intel is looking to new options for its future chips including 3D stacking of transistors to enable greater density, extending backside power, and use of gallium nitride for greater power delivery. The Santa Clara chipmaker is showing off some of its research for future silicon at the 69th Annual IEEE International Electron …

[Mike 137]

backside power

Most unfortunate nomenclature. I immediately had visions of methane powered microchips (not at all green).

But as to the reality, we've been doing this for ages with multilayer PCBs, so it's about time it got used at silicon level.

[Anonymous Coward]

Re: backside power

I think the term is "power bottom".

[HuBo]

Re: backside power

Pull my finger?

[Anonymous Coward]

Re: backside power

Did they just use the term "backside power" for the proverbial and giggles? I also find myself wondering if there was any brown-nosing required to get the term "backside" on to corporate slides?

[HuBo]

Thumbs up!

The "world’s first gate-all-around 2D transition metal dichalcogenide (TMD) transistor" and the "3D stacking n-type and p-type metal–oxide semiconductor devices" sound pretty impressive! I hope there'll be more news reporting on this, or even some open-access papers.

[Mister Dubious]

"Intel shows off backside"

The usual terminology is "moon shot."