back to article Samsung aims first 512GB DDR5 DRAM chip built on High-K/Metal Gate tech at HPC, AI markets

Samsung has unveiled its first DDR5 DRAM based on a High-K/Metal Gate (HKMG) process, debuting with a 512GB module aimed at the high-performance computing and AI markets. The DDR5 spec, which was finalised in mid-2020, allows for significantly higher capacity DIMMs and larger bandwidth than its predecessor. Samsung claimed its …

  1. Lorribot

    Thats crafty

    Not content with Exchange you get Hafnium in the RAM chips now

  2. druck Silver badge
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    Fully Stacked

    Hopefully this will greatly increase the amount of RAM which can be stacked on in a SOC (like on the M1), as well as increasing performance.

    1. Ciaran McHale

      Re: Fully Stacked

      Sod that. I want to see one of these in the next generation of Raspberry Pi. ;-)

    2. confused and dazed

      Re: Fully Stacked

      I don't think this will help much I'm afraid. As far as I understand the M1 memory is already TSV 4 Hi (8Gb or 16Gb) and this is then package-over-package onto the M1 itself. ie 2 packages of 4Hi stacks - albeit DDR4 interface.

      I guess they could move it to 8-Hi 16Gb like this to give 32GB, but I suspect costs might become prohibitive in terms of 8 stack yields ?

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