
Stop teasing
and get to the bit where you start manufacturing. Please.
Toshiba has revealed it has developed a model for transfer torque magnetoresistive random access memory (STT-MRAM) and has claimed it has, for the first time, beaten the power requirements of static random-access memory (SRAM). STT-MRAM has been on memory-makers' radar for a few years, and works by imparting spin – the …